A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current
نویسندگان
چکیده
A charge pumping (CP) technique with gate-induced drain leakage (GIDL) current is proposed to extract interface trap density ( ${N}_{\text {it}}{)}$ in GAA MOSFETs. This GIDL CP characterizes the {it}}$ even for an advanced MOSFET a floating body, small size and thin gate dielectric, which are difficult analyze by conventional technique. Using LabVIEW control, synchronized voltage pulse was automated, generated holes were effectively recombined traps extraction. In addition, confirmed be analysis tool that can reliably while minimizing device stress during measurement.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2023
ISSN: ['1558-0563', '0741-3106']
DOI: https://doi.org/10.1109/led.2023.3258454